150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T. Features ■ High voltage ■ Low collector-emitter saturation voltage VCEsat ■ High collector curre

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丝印：W6；Package：SOT23；150 V, 1 A NPN high-voltage low VCEsat transistor

1. General description NPN high-voltage low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability I

文件：284.64 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

文件：113.65 Kbytes 页数：12 Pages

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150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

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丝印：PBHV8115TLH；Package：TO-236AB；150 V, 1 A NPN high-voltage low VCEsat BISS transistor

文件：418.68 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：W6；Package：SOT23；150 V, 1 A NPN high-voltage low VCEsat transistor

1. General description NPN high-voltage low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T-Q. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability

文件：266.84 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

文件：113.65 Kbytes 页数：12 Pages

恩XP

150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

文件：113.18 Kbytes 页数：13 Pages

恩XP

150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

General description\nNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\nPNP complement: PBHV9115T. ■ High voltage\n■ Low collector-emitter saturation voltage VCEsat\n■ High collector current capability IC and ICM\n■ High collector current gain (hFE) at high IC\n■ AEC-Q101 qualified\n■ Small SMD plastic packageApplications\n■ LED driver for LED chain module\n■ LCD backlighting\n■ High Intensity Di;

恩XP

恩智浦

150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• AEC-Q101 qualified\n• Small SMD plastic package;

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