丝印：W6；Package：SOT23；150 V, 1 A NPN high-voltage low VCEsat transistor

1. General description NPN high-voltage low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T-Q. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability

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150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T. 1.2 Features n High voltage n Low collector-emitter saturation voltage VCEsat n High collec

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150 V, 1 A NPN high-voltage low VCEsat transistor

NPN high-voltage low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T-Q. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• Small SMD plastic package\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

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150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

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