150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBHV9115X. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• AEC-Q101 qualified\n• Medium power SMD plastic package;

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丝印：4F；Package：SOT89；150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

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150 V, 1 A NPN high-voltage low VCEsat transistor

NPN high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBHV9115X-Q • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• Medium power SMD plastic package\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

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Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 150V 1A SOT89

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