150 V, 1 A NPN high-voltage low VCEsat transistor

NPN high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBHV9115X-Q • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• Medium power SMD plastic package\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

Features * High voltage * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * AEC-Q101 qualified * Medium power SMD plastic package

文件：248.66 Kbytes 页数：13 Pages

NEXPERIA

安世

Low Capacitance for EIA RS-232 and EIA RS-422 Applications

文件：365.47 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

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Thermal Cutoff

文件：61.31 Kbytes 页数：1 Pages

NTE

RS232/422 Low Cap, #24-15pr, FPO, O/A FoilBraid, PVC Jkt, CMG, 100Ω

Product Description Computer EIA RS-232/422 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, twisted pairs, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), 24 AWG stranded tinned copper drain wire, PVC jacket.

文件：217.05 Kbytes 页数：2 Pages

BELDEN

百通