150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115Z. Features ■ High voltage ■ Low collector-emitter saturation voltage VCEsat ■ H

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丝印：V8115Z；Package：SC-73；150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

Features * High voltage * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * AEC-Q101 qualified * Medium power SMD plastic package

文件：248.66 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

文件：126.29 Kbytes 页数：12 Pages

恩XP

150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

文件：126.29 Kbytes 页数：12 Pages

恩XP

150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

General description\nNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\nPNP complement: PBHV9115Z. ■ High voltage\n■ Low collector-emitter saturation voltage VCEsat\n■ High collector current capability IC and ICM\n■ High collector current gain (hFE) at high IC\n■ AEC-Q101 qualified\n■ Medium power SMD plastic packageApplications\n■ LED driver for LED chain module\n■ LCD backlighting\n■ High Inten;

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恩智浦

150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115Z. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• AEC-Q101 qualified\n• Medium power SMD plastic package;

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安世

150 V, 1 A NPN high-voltage low VCEsat transistor

NPN high-voltage low VCEsat in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBHV9115Z • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• Medium power SMD plastic package\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

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安世

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 150V 1A SOT223

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司