PBHV8115Z

Marking：V8115Z；Package：SC-73；150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

Features *Highvoltage *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *AEC-Q101qualified *MediumpowerSMDplasticpackage

PBHV8115Z,115

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 150V 1A SOT223

Nexperia USA Inc.

PCLD-8115

IndustrialWiringTerminalBoardWithCJCCircuit

PCLD-8115

100kS/s,12-bit,16-chISAMultifunctionCard

PM-8115

T1/CEPTQUADPORTSMDISOLATIONTRANSFORMERS

QBH-8115

RFAMPLIFIERMODEL

QBH-8115

RFAMPLIFIER

SAA8115HL

DigitalcameraUSBinterface

GENERALDESCRIPTION TheSAA8115HListhesecondgenerationofintegratedcircuitapplicableinPCvideocamerastoconvertD1videosignalsandanalogaudiosignalstoproperlyformattedUSBpackets. FEATURES •VGA(progressivemode),CIFandmediumresolution(PALnon-interlacedmode)CCDsens

TPC8115

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPC8115

FIELDEFFECTTRANSISTORSILICONPCHANNELMOSTYPE(U-MOSIV)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=6.5mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=40S(typ.) •Lowleakagecurrent:IDSS=−10μA(m