150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

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恩XP

150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

文件：113.18 Kbytes 页数：13 Pages

恩XP

150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

General description\nNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\nPNP complement: PBHV9115T. ■ High voltage\n■ Low collector-emitter saturation voltage VCEsat\n■ High collector current capability IC and ICM\n■ High collector current gain (hFE) at high IC\n■ AEC-Q101 qualified\n■ Small SMD plastic packageApplications\n■ LED driver for LED chain module\n■ LCD backlighting\n■ High Intensity Di;

恩XP

150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• AEC-Q101 qualified\n• Small SMD plastic package;

Nexperia

安世

150 V, 1 A NPN high-voltage low VCEsat transistor

NPN high-voltage low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBHV9115TLH-Q • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• Small SMD plastic package\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 150V 1A TO236AB

Nexperia USA Inc.

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 150V 1A TO236AB

Nexperia USA Inc.