150 V, 1 A NPN high-voltage low VCEsat BISS transistor

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• Small SMD plastic package\n• AEC-Q101 qualified;

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丝印：PBHV8115TLH；Package：TO-236AB；150 V, 1 A NPN high-voltage low VCEsat BISS transistor

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150 V, 1 A NPN high-voltage low VCEsat transistor

NPN high-voltage low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBHV9115TLH-Q • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• Small SMD plastic package\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

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Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 150V 1A TO236AB

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