Power MOSFET 2.3 Amps, 80 Volts

Power MOSFET 2.3 Amps, 80 Volts N−Channel Enhancement−Mode SO−8 Dual Package Features • Ultra Low On−Resistance Provides Higher Efficiency ♦ RDS(on) = 0.215Ω, VGS = 10 V ♦ RDS(on) = 0.245Ω, VGS = 5.0 V • Low Reverse Recovery Losses • Internal RG = 50Ω • Designed for Power Management

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Power MOSFET 2.3 Amps, 80 Volts

ONSEMI

安森美半导体

Power MOSFET 2.3 Amps, 80 Volts N−Channel Enhancement−Mode SO−8 Dual Package

Power MOSFET 2.3 Amps, 80 Volts\nN−Channel Enhancement−Mode SO−8 Dual Package • Ultra Low On−Resistance Provides Higher Efficiency\n   ♦ RDS(on) = 0.215Ω, VGS = 10 V\n   ♦ RDS(on) = 0.245Ω, VGS = 5.0 V\n• Low Reverse Recovery Losses\n• Internal RG = 50Ω\n• Designed for Power Management Solutions in 42 V Automotive\n   System Applications\n• IDSS and RDS(on) Specified at Eleva;

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安森美半导体

ON
SOIC-8

ON

上传：深圳市宇集芯电子有限公司

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安森美半导体

上传：天津市博通航睿技术有限公司