NTMD3N08LR2中文资料安森美半导体数据手册PDF规格书

Power MOSFET 2.3 Amps, 80 Volts

N−Channel Enhancement−Mode SO−8 Dual Package

特性 Features

• Ultra Low On−Resistance Provides Higher Efficiency

♦ RDS(on) = 0.215Ω, VGS = 10 V

♦ RDS(on) = 0.245Ω, VGS = 5.0 V

• Low Reverse Recovery Losses

• Internal RG = 50Ω

• Designed for Power Management Solutions in 42 V Automotive

System Applications

• IDSS and RDS(on) Specified at Elevated Temperature

• Avalanche Energy Specified

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Mounting Information for SO−8 Package Provided

• Pb−Free Package is Available

Applications

• Integrated Starter Alternator

• Electronic Power Steering

• Electronic Fuel Injection

• Catalytic Converter Heaters