丝印：NSF0612A0；Package：SOT429-2；1200 V, 60 mΩ, N-channel SiC MOSFET

1. General description The NSF060120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3- pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice

文件：1.24372 Mbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：NSF0612A0；Package：SOT8071-1；1200 V, 60 mΩ, N-channel SiC MOSFET

1. General description The NSF060120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247-4 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in

文件：1.24219 Mbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司