丝印：NSS1002G；Package：LFPAK8；Bipolar Transistor 100 V, 2.5 A, Low VCE(sat) NPN Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1002CLTWG) Features • Complement to NSS1001CL • Large Current Capacitance • Low Collector to E

文件：369.2 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NSS1002G；Package：LFPAK8；Bipolar Transistor 100 V, 2.5 A, Low VCE(sat) NPN Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1002CLTWG) Features • Complement to NSS1001CL • Large Current Capacitance • Low Collector to E

文件：369.2 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NSS1002G；Package：LFPAK8；Bipolar Transistor 100 V, 2.5 A, Low VCE(sat) NPN Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1002CLTWG) Features • Complement to NSS1001CL • Large Current Capacitance • Low Collector to E

文件：369.2 Kbytes 页数：7 Pages

ONSEMI

安森美半导体