丝印：NSV；Package：DSBGA；TPA2026D2 3.2-W/Ch Stereo Class-D Audio Amplifier With Fast Gain Ramp SmartGain™ Automatic Gain Control and Dynamic Range Compression

1 Features 1• Fast AGC Start-Up Time: 5 ms • Pinout Compatible With TPA2016D2 • Filter-Free Class-D Architecture • 3.2 W/Ch Into 4 Ω at 5 V (10% THD+N) • 750 mW/Ch Into 8 Ω at 3.6 V (10% THD+N) • Power Supply Range: 2.5 V to 5.5 V • Flexible Operation With or Without I2C • Programm

文件：935.28 Kbytes 页数：43 Pages

TI

德州仪器

丝印：NSV；Package：DSBGA；TPA2026D2 3.2-W/Ch Stereo Class-D Audio Amplifier With Fast Gain Ramp SmartGain™ Automatic Gain Control and Dynamic Range Compression

1 Features 1• Fast AGC Start-Up Time: 5 ms • Pinout Compatible With TPA2016D2 • Filter-Free Class-D Architecture • 3.2 W/Ch Into 4 Ω at 5 V (10% THD+N) • 750 mW/Ch Into 8 Ω at 3.6 V (10% THD+N) • Power Supply Range: 2.5 V to 5.5 V • Flexible Operation With or Without I2C • Programm

文件：935.28 Kbytes 页数：43 Pages

TI

德州仪器

丝印：NSV；Package：DSBGA；TPA2026D2 3.2-W/Ch Stereo Class-D Audio Amplifier With Fast Gain Ramp SmartGain™ Automatic Gain Control and Dynamic Range Compression

1 Features 1• Fast AGC Start-Up Time: 5 ms • Pinout Compatible With TPA2016D2 • Filter-Free Class-D Architecture • 3.2 W/Ch Into 4 Ω at 5 V (10% THD+N) • 750 mW/Ch Into 8 Ω at 3.6 V (10% THD+N) • Power Supply Range: 2.5 V to 5.5 V • Flexible Operation With or Without I2C • Programm

文件：935.28 Kbytes 页数：43 Pages

TI

德州仪器

丝印：NSV；Package：DSBGA；TPA2026D2 3.2-W/Ch Stereo Class-D Audio Amplifier With Fast Gain Ramp SmartGain™ Automatic Gain Control and Dynamic Range Compression

1 Features 1• Fast AGC Start-Up Time: 5 ms • Pinout Compatible With TPA2016D2 • Filter-Free Class-D Architecture • 3.2 W/Ch Into 4 Ω at 5 V (10% THD+N) • 750 mW/Ch Into 8 Ω at 3.6 V (10% THD+N) • Power Supply Range: 2.5 V to 5.5 V • Flexible Operation With or Without I2C • Programm

文件：935.28 Kbytes 页数：43 Pages

TI

德州仪器

Bipolar Power Transistors 100 V, 3.0 A, Low VCE(sat) PNP Transistor

ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra−low saturation voltage, VCE(sat), and high current gain capability. These are designed for use in lower voltage, high speed switching applications where affordable efficient energy contr

文件：292.6 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Bipolar Power Transistors 100 V, 3.0 A, Low VCE(sat) PNP Transistor

ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra−low saturation voltage, VCE(sat), and high current gain capability. These are designed for use in lower voltage, high speed switching applications where affordable efficient energy contr

文件：292.6 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

High-Speed Switching Diode

Features • High−Speed Switching Applications • Lead Finish: 100 Matte Sn (Tin) • Qualified Maximum Reflow Temperature: 260°C • Extremely Small SOD−523 Package • This is a Pb−Free Device

文件：51.18 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

Low VCE(sat) NPN Transistors, 60 V, 1 A

ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient ener

文件：238.82 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Low VCE(sat) NPN Transistors, 60 V, 1 A

ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient ener

文件：238.82 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

JRC SAW FILTER

[Japan Radio Co., Ltd.] JRC SAW FILTER Application 433.92MHz DATA

文件：129.169 Kbytes 页数：4 Pages

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