Bipolar Power Transistors 100 V, 3.0 A, Low VCE(sat) PNP Transistor

ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra−low saturation voltage, VCE(sat), and high current gain capability. These are designed for use in lower voltage, high speed switching applications where affordable efficient energy contr

文件：292.6 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Bipolar Power Transistors 100 V, 3.0 A, Low VCE(sat) PNP Transistor

ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra−low saturation voltage, VCE(sat), and high current gain capability. These are designed for use in lower voltage, high speed switching applications where affordable efficient energy contr

文件：292.6 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc Silicon PNP Power Transistor

文件：317.71 Kbytes 页数：2 Pages

ISC

无锡固电

Bipolar Power Transistors 100 V, 3.0 A, Low VCE(sat) PNP Transistor

ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra−low saturation voltage, VCE(sat), and high current gain capability. These are designed for use in lower voltage, high speed switching applications where affordable efficient energy contr

文件：292.6 Kbytes 页数：7 Pages

ONSEMI

安森美半导体