丝印：NSS1001G；Package：LFPAK8；Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1001CLTWG) Features • Complement to NSS1002CL • Large Current Capacitance • Low Collector to

文件：384.17 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NSS1001G；Package：LFPAK8；Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1001CLTWG) Features • Complement to NSS1002CL • Large Current Capacitance • Low Collector to

文件：384.17 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NSS1001G；Package：LFPAK8；Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1001CLTWG) Features • Complement to NSS1002CL • Large Current Capacitance • Low Collector to

文件：384.17 Kbytes 页数：7 Pages

ONSEMI

安森美半导体