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NSS1001CL

Marking:NSS1001G;Package:LFPAK8;Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

Thisdeviceisbipolarjunctiontransistorfeaturinghighcurrent,low saturationvoltage,andhighspeedswitching. Suitableforautomotiveapplications.AEC−Q101qualifiedand PPAPcapable.(NSVS1001CLTWG) Features •ComplementtoNSS1002CL •LargeCurrentCapacitance •LowCollectorto

ONSEMION Semiconductor

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NSS1001CLTWG

Marking:NSS1001G;Package:LFPAK8;Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

Thisdeviceisbipolarjunctiontransistorfeaturinghighcurrent,low saturationvoltage,andhighspeedswitching. Suitableforautomotiveapplications.AEC−Q101qualifiedand PPAPcapable.(NSVS1001CLTWG) Features •ComplementtoNSS1002CL •LargeCurrentCapacitance •LowCollectorto

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NSVS1001CLTWG

Marking:NSS1001G;Package:LFPAK8;Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

Thisdeviceisbipolarjunctiontransistorfeaturinghighcurrent,low saturationvoltage,andhighspeedswitching. Suitableforautomotiveapplications.AEC−Q101qualifiedand PPAPcapable.(NSVS1001CLTWG) Features •ComplementtoNSS1002CL •LargeCurrentCapacitance •LowCollectorto

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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