丝印：NSS1001G；Package：LFPAK8；Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1001CLTWG) Features • Complement to NSS1002CL • Large Current Capacitance • Low Collector to

文件：384.17 Kbytes 页数：7 Pages

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丝印：NSS1001G；Package：LFPAK8；Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1001CLTWG) Features • Complement to NSS1002CL • Large Current Capacitance • Low Collector to

文件：384.17 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Bipolar Transistor -100V, -2.5A PNP Low VCE(sat) PNP Single LFPAK8

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications, AEC-Q101 qualified, PPAP capable. • Large Current Capacity\n• Enable design easyly\n• Low collector to emitter saturation voltage\n• Improve efficiency in operation\n• High speed switching\n• Improve efficiency in operation\n• High allowable power dissipation\n• Enable design easily;

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安森美半导体

RF SPDT Switch MMIC

Features • Broadband Frequency Range 0.1 to 8.5 GHz • Capable of 1.6 V Operation • Low Insertion Loss / High Isolation / Middle Power • Small and Thin−sized Package − 1.0 x 1.0 x 0.43 mm • Wettable Flank Package for Optimal Automated Optical Inspection (AOI) • NSV Prefix for Automotive and O

文件：230.33 Kbytes 页数：6 Pages

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安森美半导体

RF SPDT Switch MMIC

Features • Broadband Frequency Range 0.1 to 8.5 GHz • Capable of 1.6 V Operation • Low Insertion Loss / High Isolation / Middle Power • Small and Thin−sized Package − 1.0 x 1.0 x 0.43 mm • Wettable Flank Package for Optimal Automated Optical Inspection (AOI) • NSV Prefix for Automotive and O

文件：230.33 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1001CLTWG) Features • Complement to NSS1002CL • Large Current Capacitance • Low Collector to

文件：384.17 Kbytes 页数：7 Pages

ONSEMI

安森美半导体