丝印：NSF0612A0；Package：SOT429-2；1200 V, 60 mΩ, N-channel SiC MOSFET

1. General description The NSF060120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3- pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice

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NEXPERIA

安世

1200 V, 60 mΩ, N-channel SiC MOSFET

The NSF060120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3- pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high volta • Excellent RDSon temperature stability\r\n• Very low switching losses\r\n• Fast reverse recovery\r\n• Fast switching speed\r\n• Temperature independent turn-off switching losses\r\n• Very fast and robust intrinsic body diode;

Nexperia

安世

DUB8

NOVOSENSE

纳芯微电子

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HTSSOP16

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德州仪器

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DPAK-3

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上传：深圳市芯巴巴科技有限公司