NPTB00004B数据手册MACOM中文资料规格书

描述 Description

The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standard surface mount plastic package.

特性 Features

·57 % Drain Efficiency @ 2.5 GHz
·GaN on Si HEMT D-Mode Transistor
·Tunable from DC - 6 GHz
·Industry standard SOIC plastic package
·28V Operation
·RoHS* Compliant
·100 % RF Tested
·14.8 dB Gain @ 2.5 GHz
·28 V Operation
·Suitable for linear and saturated applications

应用 Application

·Avionics
·ISM
·land mobile radio
·VHF/UHF/L-Band Radar
·Wireless Infrastructure