NPT1015B数据手册MACOM中文资料规格书

描述 Description

The NPT1015B GaN HEMT is a wideband transistor optimized for DC-3.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 45W (46.5 dBm) in an industry standard metal-ceramic package with a bolt down flange. This product has been designed to be reliable, with a low thermal resistance, and rugged, able to withstand extreme mismatch on the input and output with no device damage. For load-pull data and non-linear models, please send an e-mail to applications@macom.com.

特性 Features

·Suitable for Linear and Saturated Applications
·Rugged Design Passes 15:1 VSWR test
·High Drain Efficiency (>55%)
·Industry Standard Package
·28V Operation
·Tunable from DC-3.5 GHz
·Reliable with MTTF > 106 at TJ = 200°C

应用 Application

·Aerospace and Defense
·Avionics
·Defense Communications
·ISM
·VHF/UHF/L-Band Radar
·Wireless Infrastructure