NPT2022数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The NPT2022 GaN HEMT is a wideband transistor optimized for DC - 2 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 100 W (50 dBm) in an industry standard plastic package. The NPT2022 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar. Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology.

特性 Features

·GaN on Si HEMT D-Mode Transistor
·20 dB Gain @ 900 MHz
·60 % Drain Efficiency @ 900 MHz
·100 % RF Tested
·Standard plastic package with bolt down flange
·48 V Operation
·Tunable from DC - 2 GHz
·Suitable for linear and saturated applications
·RoHS* Compliant and 260°C reflow compatible

应用 Application

·Aerospace and Defense
·Avionics
·Defense Communications
·ISM
·VHF/UHF/L/S-Band Radar
·Wireless Infrastructure