Next generation high power RF semiconductor technology

文件：12.93189 Mbytes 页数：9 Pages

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GaN Wideband Transistor 48 V, 100 W

文件：1.81513 Mbytes 页数：11 Pages

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Gallium Nitride 48V, 100W, DC-2 GHz HEMT

文件：2.64055 Mbytes 页数：10 Pages

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GaN Wideband Transistor 48 V, 100 W

The NPT2022 GaN HEMT is a wideband transistor optimized for DC - 2 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 100 W (50 dBm) in an industry standard plastic package. The NPT2022 is ideally suited for defense communications, land mobile radio, avi ·GaN on Si HEMT D-Mode Transistor\n·20 dB Gain @ 900 MHz\n·60 % Drain Efficiency @ 900 MHz\n·100 % RF Tested\n·Standard plastic package with bolt down flange\n·48 V Operation\n·Tunable from DC - 2 GHz\n·Suitable for linear and saturated applications\n·RoHS* Compliant and 260°C reflow compati;

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Package：TO-272BC；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：HEMT N-CH 48V 100W DC-2GHZ

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GaN Wideband Transistor 48 V, 100 W

文件：1.81513 Mbytes 页数：11 Pages

MA-COM

GaN Wideband Transistor 48 V, 100 W

文件：1.81513 Mbytes 页数：11 Pages

MA-COM

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：EVAL BOARD FOR NPT2022

MACOM Technology Solutions