NPT2024数据手册MACOM中文资料规格书

描述 Description

The NPT2024 GaN HEMT is a wideband transistor optimized for DC - 2.7GHz operation in push pull configuration. This device supports CW, pulsed, and linear operation with output power levels to 200 W (53 dBm) combined power in an industry standard plastic package. The NPT2024 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar. Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology.

特性 Features

·GaN on Si HEMT D-Mode Transistor
·100 % RF Tested
·68 % Drain Efficiency @ 900 MHz
·22 dB Gain @ 900 MHz
·50 V Operation
·Tunable from DC - 2.7 GHz
·Suitable for linear and saturated applications
·RoHS* Compliant and 260°C reflow compatible
·Standard plastic package with bolt down flange

应用 Application

·Aerospace and Defense
·Avionics
·Defense Communications
·ISM
·VHF/UHF/L/S-Band Radar
·Wireless Infrastructure