首页 >NP90N04MDH>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
NP90N04MDH | Product Scout Automotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelSuperTrenchPowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelTrenchPowerMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
SWITCHINGN-CHANNELPOWERMOSFET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=2.8mΩMAX.(VGS=10V,ID=45A) ●LowCiss:Ciss=4700pFTYP.(VDS=25V) ●Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheNP90N04PUFisN-channelMOSFieldEffect Transistordesignedforhighcurrentswitching applications. FEATURES •Channeltemperature175°Crating •Superlowon-stateresistance RDS(on)=3.0mΩMAX.(VGS=10V,ID=45A) •LowCiss: | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP90N04VDGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Logiclevel •Superlowon-stateresistance RDS(on)1=4.0mΩMAX.(VGS=10V,ID=45A) RDS(on)2=8.6mΩMAX.(VGS=4.5V,ID=35A) •Highcurrentra | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
40V–90A–N-channelPowerMOSFETApplication:Automotive Features Superlowon-stateresistance RDS(on)=2.8mMAX.(VGS=10V,ID=45A) LowCiss:Ciss=3900pFTYP.(VDS=25V) Logicleveldrivetype DesignedforautomotiveapplicationandAEC-Q101qualified | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-ChannelMOSFETusesadvancedSGTtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
isc |
2024 |
TO-220 |
250 |
国产品牌isc,可替代原装 |
询价 | ||
R |
23+ |
T0-TO-220 |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
NEXPERIA/安世 |
23+ |
SOD123 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
NEC |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
询价 | ||
NEC |
23+ |
TO-220 |
6000 |
原装正品,支持实单 |
询价 | ||
R |
22+ |
T0-220 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
NEC-日本电气 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
VBSEMI |
19+ |
T0-220 |
29600 |
绝对原装现货,价格优势! |
询价 | ||
NEC |
08+(pbfree) |
TO-263 |
8866 |
询价 | |||
NEC |
23+ |
TO-263 |
11839 |
全新原装 |
询价 |
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