isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.1mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.11 Kbytes 页数：2 Pages

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无锡固电

Product Scout Automotive

文件：5.67799 Mbytes 页数：6 Pages

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Product Scout Automotive

文件：5.67799 Mbytes 页数：6 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 45 A) ● Low Ciss: Ciss = 4700 pF TYP. (VDS = 25 V) ● Designed for automotive application

文件：112.37 Kbytes 页数：8 Pages

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瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.88 Kbytes 页数：2 Pages

ISC

无锡固电