NP90N04VUK-E2-AY技术资料参数批发采购瑞萨-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NP90N04VUK-E2-AY	文件：271.19 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Designed for automotive application an 文件：271.19 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
NP90N04VUK-E2-AY	文件：111.62 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) • Designed for automotive application a 文件：111.62 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
NP9926ASR	文件：0 bytes Page：0 Pages	SOP-8	南麟上传：深圳市勇康微科技有限公司	南麟
NPA-100B-015A	文件：0 bytes Page：0 Pages	14-SOIC 模块	Amphenol Advanced Sensors 上传：深圳市汇创佳电子科技有限公司	Amphenol Advanced Sensors
NPA-500B-005G	文件：0 bytes Page：0 Pages	14-SMD 模块	Amphenol Advanced Sensors 上传：深圳市汇创佳电子科技有限公司	Amphenol Advanced Sensors

更多NP90N04VUK-E2-AY供应商更新时间2026-2-8 11:00:00