首页 >NP90N04NUH>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NP90N04NUH | Product Scout Automotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelSuperTrenchPowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelTrenchPowerMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=2.8mΩMAX.(VGS=10V,ID=45A) ●LowCiss:Ciss=4700pFTYP.(VDS=25V) ●Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheNP90N04PUFisN-channelMOSFieldEffect Transistordesignedforhighcurrentswitching applications. FEATURES •Channeltemperature175°Crating •Superlowon-stateresistance RDS(on)=3.0mΩMAX.(VGS=10V,ID=45A) •LowCiss: | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP90N04VDGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Logiclevel •Superlowon-stateresistance RDS(on)1=4.0mΩMAX.(VGS=10V,ID=45A) RDS(on)2=8.6mΩMAX.(VGS=4.5V,ID=35A) •Highcurrentra | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
40V–90A–N-channelPowerMOSFETApplication:Automotive Features Superlowon-stateresistance RDS(on)=2.8mMAX.(VGS=10V,ID=45A) LowCiss:Ciss=3900pFTYP.(VDS=25V) Logicleveldrivetype DesignedforautomotiveapplicationandAEC-Q101qualified | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-ChannelMOSFETusesadvancedSGTtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
isc |
2024 |
I2PAK/TO-262 |
7500 |
国产品牌isc,可替代原装 |
询价 | ||
NEC-日本电气 |
24+25+/26+27+ |
TO-262-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
RENESAS/瑞萨 |
23+ |
TO-262 |
89630 |
当天发货全新原装现货 |
询价 | ||
RENESAS/瑞萨 |
22+ |
TO-262 |
12500 |
瑞萨全系列在售,终端可出样品 |
询价 | ||
RENESAS/瑞萨 |
23+ |
5177 |
深圳现货 |
询价 | |||
Renesas |
22+ |
TO2623 |
9000 |
原厂渠道,现货配单 |
询价 | ||
Renesas |
23+ |
TO2623 |
9000 |
原装正品，支持实单 |
询价 | ||
Renesas |
23+ |
TO-TO-220 |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
RENESAS/瑞萨 |
TO-TO-220 |
33000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
Renesas |
21+ |
QSOP24 |
8068 |
全新原装鄙视假货15118075546 |
询价 |
相关规格书
更多- NP90N04NUK
- NP90N04PDH
- NP90N04PUF_15
- NP90N04VDG
- NP90N04VDG-E1-AY
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- NPA
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- NPA1006
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- NPA1008
相关库存
更多- NP90N04NUK-S18-AY
- NP90N04PUF
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- NP90N04VDG
- NP90N04VDG-E2-AY
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- NP90N055VDG-E2-AY
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- NP90N055VUK-E1-AY
- NP90N055VUK-E2-AY
- NP90N06VDK
- NP90N06VDK-E1-AY
- NP90N06VDK-E2-AY
- NP90N06VLG
- NP90N06VLG_15
- NP90N06VLG-E2-AYNOTE
- NPA
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- NPA1003QA
- NPA1006
- NPA1006-SMB
- NPA1008
- NPA1008-SMB
