GENERAL PURPOSE L TO X-BAND GaAs MESFET

DESCRIPTION NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxy sealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz fre

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NEC

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GaAs MES FET

L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. FEATURES • Low noise figure & High associated gain NF = 0.8 dB TY

文件：170.55 Kbytes 页数：8 Pages

RENESAS

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丝印：J；GaAs MES FET

L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. FEATURES • Low noise figure & High associated gain NF = 0.8 dB TY

文件：170.55 Kbytes 页数：8 Pages

RENESAS

瑞萨

丝印：J；GaAs MES FET

L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. FEATURES • Low noise figure & High associated gain NF = 0.8 dB TY

文件：170.55 Kbytes 页数：8 Pages

RENESAS

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GENERAL PURPOSE L TO X-BAND GaAs MESFET

DESCRIPTION\nNE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxy sealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz frequ

Renesas

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GENERAL PURPOSE FET N-CHANNEL GaAs MES FET

DESCRIPTION\nNE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitable for DBS, TVRO, GPS and another commercial systems • Low noise figure & High associated gain\nNF = 0.8 dB TYP., Ga= 12 dB TYP. at f = 4 GHz;

Renesas

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GENERAL PURPOSE L TO X-BAND GaAs MESFET

Renesas

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