NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECs NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 1.8 watts of output power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5

文件：285.94 Kbytes 页数：10 Pages

CEL

Package：4-SMD，扁平引线；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 8V 1.9GHZ 79A

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N-CHANNEL GaAs HJ-FET

1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear gain, high efficiency and excellent dist

文件：207.76 Kbytes 页数：11 Pages

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NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECs NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 1.8 watts of output power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5

文件：285.94 Kbytes 页数：10 Pages

CEL