NE55中文资料下载原装现货美台半导体第6页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NE5520379A	文件：295.84 Kbytes Page：13 Pages	SILICON POWER MOS FET 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology 文件：295.84 Kbytes 页数：13 Pages	RENESAS 瑞萨	RENESAS
NE5520379A-T1	文件：295.84 Kbytes Page：13 Pages	丝印：A3；Package：79A；SILICON POWER MOS FET 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology 文件：295.84 Kbytes 页数：13 Pages	RENESAS 瑞萨	RENESAS
NE5520379A-T1A	文件：295.84 Kbytes Page：13 Pages	丝印：A3；Package：79A；SILICON POWER MOS FET 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology 文件：295.84 Kbytes 页数：13 Pages	RENESAS 瑞萨	RENESAS
NE5520379A-T1A-A	文件：390.12 Kbytes Page：9 Pages	NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET DESCRIPTION NECs NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NECs NEWMOS technology (NECs 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 文件：390.12 Kbytes 页数：9 Pages	CEL	CEL
NE5521	文件：69.43 Kbytes Page：5 Pages	LVDT signal conditioner DESCRIPTION The NE/SA/SE5521 is a signal conditioning circuit for use with Linear Variable Differential Transformers (LVDTs) and Rotary Variable Differential Transformers (RVDTs). The chip includes a low distortion, amplitude-stable sine wave oscillator with programmable frequency to drive the 文件：69.43 Kbytes 页数：5 Pages	PHI PHI	PHI
NE5521D	文件：69.43 Kbytes Page：5 Pages	LVDT signal conditioner DESCRIPTION The NE/SA/SE5521 is a signal conditioning circuit for use with Linear Variable Differential Transformers (LVDTs) and Rotary Variable Differential Transformers (RVDTs). The chip includes a low distortion, amplitude-stable sine wave oscillator with programmable frequency to drive the 文件：69.43 Kbytes 页数：5 Pages	PHI PHI	PHI
NE5521N	文件：69.43 Kbytes Page：5 Pages	LVDT signal conditioner DESCRIPTION The NE/SA/SE5521 is a signal conditioning circuit for use with Linear Variable Differential Transformers (LVDTs) and Rotary Variable Differential Transformers (RVDTs). The chip includes a low distortion, amplitude-stable sine wave oscillator with programmable frequency to drive the 文件：69.43 Kbytes 页数：5 Pages	PHI PHI	PHI
NE552R479A	文件：291.9 Kbytes Page：11 Pages	SILICON POWER MOS FET 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS 文件：291.9 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
NE552R479A-T1	文件：291.9 Kbytes Page：11 Pages	SILICON POWER MOS FET 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS 文件：291.9 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
NE552R479A-T1A	文件：291.9 Kbytes Page：11 Pages	SILICON POWER MOS FET 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS 文件：291.9 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS

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技术参数

Pb-free：
Pb
Halide free：
H
Status：
Active
Rail to Rail：
No
Channels：
2
VS Min (V)：
-18
VS Max (V)：
18
Iq Typ (mA)：
1.3
VOS Max (mV)：
5
GBW Typ (MHz)：
2
SR Typ (V/µs)：
50
IO Typ (mA)：
0.005
ΔVOS/ΔT (μV/C)：
7
Ibias Typ (pA)：
400000
CMRR Typ (dB)：
110
Architecture：
Bipolar
Temperature Range (°C)：
-40 to 125
Package Type：
SOIC-16

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市芯连胜科技有限公司	NE5532N	PHI	20+	DIP-8	4520	原装正品现货	询价
深圳市华来深电子有限公司	NE5532AN	S	23+	DIP8	8560	受权代理!全新原装现货特价热卖!	询价
深圳市科雨电子有限公司	NE555DR	TI/德州仪器	25+	S3	1069	就找我吧!--邀您体验愉快问购元件!	询价
深圳市正迈科技有限公司	NE555DR	TI/德州仪器	23+	SOIC-8	10089	优势 /原装现货长期供应现货支持	询价
深圳市百诺芯科技有限公司	NE5532AP	TI/德州仪器	23+	NA	2860	原装正品代理渠道价格优势	询价
深圳市信佳源电子有限公司	NE556DT	ST/意法	11+	SOP8	200	原装/现货	询价
深圳市利加科技有限公司	NE5532DR	TI	2022+	NFBGA-169	8000		询价
芯有半导体（深圳）有限公司	NE5532P	TI	20+	放大器IC	11519	找原厂原装进口货选星佑电子就对了	询价
深圳市宇创芯科技有限公司	NE5534PS	TI/德州仪器	24+	5.2MM	9600	原装现货,优势供应,支持实单!	询价
深圳市恒达亿科技有限公司	NE5512	PHI	25+	SOP-8	4500	全新原装、诚信经营、公司现货销售	询价

更多NE55供应商更新时间2026-4-21 12:05:00

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