GaAs HETEROJUNCTION BIPOLAR TRANSISTOR

L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER NPN GaAs HBT DESCRIPTION The NE52418 is an NPN GaAs HBT (Heterojunction Bipolar Transistor) developed for L to S band mobile communication equipment. FEATURES • Ideal for low noise and high gain amplifiers NF = 0.95 dB TYP., Ga = 17 dB TYP. (@

文件：231.33 Kbytes 页数：14 Pages

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NECs L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

文件：196 Kbytes 页数：6 Pages

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L To S Band Low Noise And High Gain Amplifier NPN Gaas Hbt

The NE52418 is a L To S Band Low Noise And High Gain Amplifier NPN Gaas Hbt.

Renesas

瑞萨

丝印：V45；GaAs HETEROJUNCTION BIPOLAR TRANSISTOR

L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER NPN GaAs HBT DESCRIPTION The NE52418 is an NPN GaAs HBT (Heterojunction Bipolar Transistor) developed for L to S band mobile communication equipment. FEATURES • Ideal for low noise and high gain amplifiers NF = 0.95 dB TYP., Ga = 17 dB TYP. (@

文件：231.33 Kbytes 页数：14 Pages

RENESAS

瑞萨

NECs L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

文件：196 Kbytes 页数：6 Pages

CEL

Package：SC-82A，SOT-343；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 5V 4-SMINI MOLD

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包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：EVAL BOARD FOR NE52418

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Package：SC-82A，SOT-343；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 5V 4-SMINI MOLD

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