NE4210S01-T1技术资料参数供应代理瑞萨CEL-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NE4210S01-T1	文件：252.15 Kbytes Page：7 Pages	SUPER LOW NOISE HJ FET DESCRIPTION NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low n 文件：252.15 Kbytes 页数：7 Pages	CEL	CEL
NE4210S01-T1	文件：199.83 Kbytes Page：18 Pages	HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. 文件：199.83 Kbytes 页数：18 Pages	RENESAS 瑞萨	RENESAS
NE4210S01-T1	文件：65.23 Kbytes Page：16 Pages	X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. 文件：65.23 Kbytes 页数：16 Pages	NEC 瑞萨	NEC
NE4210S01-T1B	文件：65.23 Kbytes Page：16 Pages	X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB T 文件：65.23 Kbytes 页数：16 Pages	NEC 瑞萨	NEC
NE4210S01-T1B	文件：252.15 Kbytes Page：7 Pages	SUPER LOW NOISE HJ FET DESCRIPTION NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low n 文件：252.15 Kbytes 页数：7 Pages	CEL	CEL
NE4210S01-T1B	文件：199.83 Kbytes Page：18 Pages	HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. 文件：199.83 Kbytes 页数：18 Pages	RENESAS 瑞萨	RENESAS
NE4210S01-T1B	文件：100 bytes Page：1 Pages	Package：4-SMD；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带类别：分立半导体产品晶体管 - FET，MOSFET - 射频描述：HJ-FET 13DB S01	CEL	CEL

详细参数

型号：
NE4210S01-T1
功能描述：
射频GaAs晶体管 Super Lo Noise HJFET
RoHS：
否
制造商：
TriQuint Semiconductor
技术类型：
pHEMT
频率：
500 MHz to 3 GHz
增益：
10 dB
噪声系数：
正向跨导
gFS（最大值/最小值）：
4 S 漏源电压
闸/源击穿电压：
- 8 V
漏极连续电流：
3 A
最大工作温度：
+ 150 C
功率耗散：
10 W

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	NE4210S01-T1	RENESAS	2016+	SMT-86	6000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市振宏微科技有限公司	NE4210S01-T1	SMD	25+	NA	15659	振宏微专业只做正品,假一罚百!	询价
京海半导体(深圳)有限公司	NE4210S01-T1	RENESAS/瑞萨	25+	SMT-86	10000	原装现货假一罚十	询价
深圳市科恒伟业电子有限公司	NE4210S01-T1	NEC	2450+	SO86	9850	只做原装正品现货或订货假一赔十!	询价
深圳市维基鸿电子有限公司	NE4210S01-T1	RENESAS/瑞萨	25+	SMT-86	10000	全新原装现货库存	询价
深圳市天地昆电子有限公司	NE4210S01-T1	NEC	0904+	SOT-86	63	上传都是百分之百进口原装现货	询价
深圳市信科微科技有限公司	NE4210S01-T1	NEC?	26+	DIP	16800	原厂渠道可含税出货，支持一站式配单	询价
深圳市华斯顿科技有限公司	NE4210S01-T1	Renesas(瑞萨)	26+23+		23373	绝对原装正品全新进口深圳现货	询价
深圳市亚泰盈科电子有限公司	NE4210S01-T1	NEC	26+	DIP	16800	原装现货	询价
深圳市一线半导体有限公司	NE4210S01-T1B		24+		3000	公司存货	询价

更多NE4210S01-T1供应商更新时间2026-10-16 15:22:00

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