NPN SILICON HI FREQUNCY TRANSISTOR

DESCRIPTION: The ASI NE21935 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz. FEATURES INCLUDE: • High frequency 8.0 GH • Low noise, 1 dB at 0.5 GHz.

文件：35.71 Kbytes 页数：1 Pages

ASI

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE

文件：550.89 Kbytes 页数：12 Pages

NEC

瑞萨

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE

文件：550.89 Kbytes 页数：12 Pages

NEC

瑞萨

NPN MEDIUM POWER UHF-VHF TRANSISTOR

DESCRIPTION AND APPLICATIONS The NE221 is an NPN silicon, bipolar transistor series, designed especially for wide-band, low distortion amplifiers at UHF. The series has excellent power capabiltiles for oscillator (up to 1 GHz) and, CATV and MATV linear amplifiers. FEATURES ● ULTRA-LINEAR BROAD

文件：132.8 Kbytes 页数：4 Pages

NEC

瑞萨

NPN MEDIUM POWER UHF-VHF TRANSISTOR

DESCRIPTION AND APPLICATIONS The NE221 is an NPN silicon, bipolar transistor series, designed especially for wide-band, low distortion amplifiers at UHF. The series has excellent power capabiltiles for oscillator (up to 1 GHz) and, CATV and MATV linear amplifiers. FEATURES ● ULTRA-LINEAR BROAD

文件：132.8 Kbytes 页数：4 Pages

NEC

瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space application

文件：199.18 Kbytes 页数：10 Pages

RENESAS

瑞萨

C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.

文件：39.82 Kbytes 页数：8 Pages

NEC

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CABLE CLAMPS, PLASTISOL DIPPED

文件：39.06 Kbytes 页数：1 Pages

RICHCO

HETERO JUNCTION FIELD EFFECT TRANSISTOR

文件：570.73 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial High Frequency Transistor

文件：228.55 Kbytes 页数：8 Pages

RENESAS

瑞萨