CABLE CLAMPS, PLASTISOL DIPPED

文件：39.06 Kbytes 页数：1 Pages

RICHCO

Near edge thermal printhead (8 dots / mm)

The NE2001-VA20A is a near edge thin-film thermal printhead where the printing medium passes straight through,suited for card printers. Features 1) Inclined toward the printing surface to provide excellent printing quality even for cards and thick paper. 2) Prints directly on printing medium th

文件：166.06 Kbytes 页数：5 Pages

ROHM

罗姆

Near edge thermal printhead (8 dots / mm)

The NE2001-VA20A is a near edge thin-film thermal printhead where the printing medium passes straight through,suited for card printers. Features 1) Inclined toward the printing surface to provide excellent printing quality even for cards and thick paper. 2) Prints directly on printing medium th

文件：166.06 Kbytes 页数：5 Pages

ROHM

罗姆

Near edge thermal printhead (8 dots / mm)

The NE2002–VA10A is a near edge thin–film thermal printhead, where the printing medium passes straight through at printing speeds up to 10 inch / second. It is suited for high–speed label printers. Features 1) Inclined toward the printing surface to provide excellent printing quality even for ca

文件：215.28 Kbytes 页数：5 Pages

ROHM

罗姆

Near edge thin film thermal printhead (8 dots / mm)

The NE2004–VA10A is a near edge thin–film thermal printhead, where the printing medium passes straight through at printing speeds up to 10 inch / second. It is suited for high–speed label printers. Features 1) Inclined toward the printing surface to provide excellent printing quality even for ca

文件：213.97 Kbytes 页数：5 Pages

ROHM

罗姆

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

文件：329.07 Kbytes 页数：9 Pages

NEC

瑞萨

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

文件：329.07 Kbytes 页数：9 Pages

NEC

瑞萨

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

文件：329.07 Kbytes 页数：9 Pages

NEC

瑞萨

Silicon NPN Epitaxial High Frequency Transistor

FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications ​​​​​​​ APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi

文件：571.67 Kbytes 页数：7 Pages

CEL

Silicon NPN Epitaxial High Frequency Transistor

FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications ​​​​​​​ APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi

文件：217.2 Kbytes 页数：8 Pages

RENESAS

瑞萨