Silicon NPN Epitaxial High Frequency Transistor

FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications ​​​​​​​ APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi

文件：571.67 Kbytes 页数：7 Pages

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Silicon NPN Epitaxial High Frequency Transistor

FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications ​​​​​​​ APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi

文件：217.2 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial High Frequency Transistor

FEATURES\n• High transition frequency fT = 11 GHz TYP.\n• Ideal for low noise and low distortion amplification\n• Suitable for equipments of low collector voltage (Less than 5 V)\n• Suitable for up to 1 GHz applications\nAPPLICATIONS\n• LNA (Low Noise Amplifier) or power splitter for digital-TV

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Silicon NPN Epitaxial High Frequency Transistor

FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications ​​​​​​​ APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi

文件：217.2 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial High Frequency Transistor

FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications ​​​​​​​ APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi

文件：571.67 Kbytes 页数：7 Pages

CEL

Silicon NPN Epitaxial High Frequency Transistor

FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications ​​​​​​​ APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi

文件：571.67 Kbytes 页数：7 Pages

CEL

Silicon NPN Epitaxial High Frequency Transistor

文件：228.55 Kbytes 页数：8 Pages

RENESAS

瑞萨

Package：SC-70，SOT-323；包装：散装 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 6V 11GHZ 3SMINMOLD

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Package：SC-70，SOT-323；包装：散装 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 6V 11GHZ SOT323

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