CIT SWITCH

文件：252.92 Kbytes 页数：3 Pages

CIT

丝印：NCE2013J；Package：DFN2X2-6L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2013J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = 20V,ID = 13A RDS(ON)

文件：696.03 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE2030；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2030 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =30A RDS(ON)

文件：404.35 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE2030U；Package：TO-262；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2030U uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =30A RDS(ON)

文件：378.79 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE2090K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =90A RDS(ON)

文件：359.75 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE20P05J；Package：DFN2X2-6L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P05J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -20V,ID = -5A RDS(O

文件：737.65 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE20P08J；Package：NCE20P08J；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P08J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -20V,ID = -8A RDS(O

文件：726.29 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE25P60K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE25P60K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-50A RDS(ON)

文件：752.4 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE25TD135LP；Package：TO-3PN；1350V, 25A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat

文件：388.18 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：NCE25TD135LT；Package：TO-247；1350V, 25A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat

文件：361.78 Kbytes 页数：6 Pages

NCEPOWER

新洁能