CIT SWITCH

文件：252.92 Kbytes 页数：3 Pages

CIT

丝印：NCE100ED65VT；Package：TO-247-3L；650V 100A Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench field stop Gen.7 Technology Offerin

文件：1.17248 Mbytes 页数：9 Pages

NCEPOWER

新洁能

丝印：NCE100ED65VT4；Package：TO-247-4L；650V 100A Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench field stop Gen.7 Technology Offerin

文件：1.12552 Mbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：NCE100ED65VTP；Package：TO-247P-3L；650V 100A Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench field stop Gen.7 Technology Offerin

文件：1.18598 Mbytes 页数：9 Pages

NCEPOWER

新洁能

丝印：NCE100ED65VTP4；Package：TO-247P-4L；650V 100A Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench field stop Gen.7 Technology Offerin

文件：1.09886 Mbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：NCE100TD120BTP；Package：TO-247P；1200V, 100A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件：1.55511 Mbytes 页数：10 Pages

NCEPOWER

新洁能

丝印：NCE100TD120VTP；Package：TO-247P；1200V, 100A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件：1.62222 Mbytes 页数：10 Pages

NCEPOWER

新洁能

丝印：NCE100TD120VTP4；Package：TO-247P-4L；1200V, 100A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件：1.86137 Mbytes 页数：9 Pages

NCEPOWER

新洁能

丝印：NCE120ED120VTP；Package：TO-247P-3L；1200V, 120A, Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench Field Stop Gen.7 Technology

文件：1.22699 Mbytes 页数：9 Pages

NCEPOWER

新洁能

丝印：NCE120ED120VTP4；Package：TO-247P-4L；1200V, 120A, Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench Field Stop Gen.7 Technology

文件：1.1386 Mbytes 页数：8 Pages

NCEPOWER

新洁能