NCE100ED65VTP4中文资料无锡新洁能股份数据手册PDF规格书

General Description

Using NCE's proprietary high density trench gate design and advanced FS

(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior

conduction and switching performances, and easy parallel operation.

特性 Features

 Trench field stop Gen.7 Technology Offering

 Low saturation voltage: VCEsat = 1.45V(Typ.) @ IC = 100 A

 High speed switching, low switching losses

 Maximum junction temperature Tvjmax = 175°C

 Tighten parameter distribution

 High ruggedness, temperature stable behavior

 Pb-free lead plating; RoHS compliant

Application

 PV power

 Three-level Solar String Inverter

 UPS