丝印：NCE12P09S；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -12V,ID = -9A RDS(ON)

文件：290.84 Kbytes 页数：7 Pages

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丝印：NCE14P40K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE14P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS = -40V,ID = -30A RDS(ON) =11mΩ @ VGS= -10V (Typ) RDS(ON) =15mΩ @ VGS= -4.5V (Typ)

文件：698.2 Kbytes 页数：7 Pages

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丝印：NCE1504R；Package：SOT-223-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1504R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 150V,ID = 4A RDS(ON)

文件：362.02 Kbytes 页数：8 Pages

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丝印：NCE1507AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1507AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 150V,ID = 7A RDS(ON)

文件：336.17 Kbytes 页数：7 Pages

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丝印：NCE1540AD；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1540AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =40A RDS(ON)

文件：320.92 Kbytes 页数：7 Pages

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丝印：NCE1540AF；Package：TO-220F；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1540AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =20A RDS(ON)

文件：558.99 Kbytes 页数：7 Pages

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丝印：NCE1550F；Package：TO-220F；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1550F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =50A RDS(ON)

文件：367.68 Kbytes 页数：7 Pages

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丝印：NCE1570；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1570 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =70A RDS(ON)

文件：371.73 Kbytes 页数：7 Pages

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丝印：NCE15P25I；Package：TO-251；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE15P25JI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-25A RDS(ON)

文件：532.17 Kbytes 页数：7 Pages

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丝印：NCE15P25J；Package：TO-220-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE15P25J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-25A RDS(ON)

文件：536.84 Kbytes 页数：7 Pages

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