丝印：1013EX；Package：SOT-23；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE1013E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -1.8V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = -20V,ID =-0.66A RDS(ON

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NCEPOWER

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