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型号	下载订购	功能描述	制造商上传企业	LOGO
NCD57090A	文件：2.04169 Mbytes Page：25 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options 文件：2.04169 Mbytes 页数：25 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57090ADWR2G	文件：2.04169 Mbytes Page：25 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options 文件：2.04169 Mbytes 页数：25 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57090B	文件：2.04169 Mbytes Page：25 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options 文件：2.04169 Mbytes 页数：25 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57090BDWR2G	文件：2.04169 Mbytes Page：25 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options 文件：2.04169 Mbytes 页数：25 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57090C	文件：2.04169 Mbytes Page：25 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options 文件：2.04169 Mbytes 页数：25 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57090CDWR2G	文件：2.04169 Mbytes Page：25 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options 文件：2.04169 Mbytes 页数：25 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57090D	文件：2.04169 Mbytes Page：25 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options 文件：2.04169 Mbytes 页数：25 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57090DDWR2G	文件：2.04169 Mbytes Page：25 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options 文件：2.04169 Mbytes 页数：25 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57090E	文件：2.04169 Mbytes Page：25 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options 文件：2.04169 Mbytes 页数：25 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57090EDWR2G	文件：2.04169 Mbytes Page：25 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options 文件：2.04169 Mbytes 页数：25 Pages	ONSEMI 安森美半导体	ONSEMI

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技术参数

Pb-free：
Pb
Halide free：
H
Status：
Active
Power Switch：
IGBT
Number of Outputs：
1
Topology：
Single
Isolation Type：
Non-Isolated
Vin Max (V)：
5.5
VCC Max (V)：
35
Drive Source/Sink Typ (mA)：
5000/5000
Rise Time (ns)：
30
Fall Time (ns)：
30
tp Max (ns)：
70
Package Type：
SOIC-16

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市近平电子有限公司	NCD5.1C	NEC	6000	面议	19	DIP/SMD	询价
深圳市纳立科技有限公司	NCD5703CDR2G		三年内		1983	只做原装正品	询价
深圳市粤骏腾电子科技有限公司	NCD57001DWR2G	ON/安森美	24+	SOP16	68000	绝对原装正品现货假一罚十	询价
瀚佳科技(深圳)有限公司	NCD5703CDR2G	ON Semiconductor	24+	-	65200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	NCD5700DR2G	ON Semiconductor	2010+	N/A	2492	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿（深圳）半导体有限公司	NCD5701BDR2G	ON/安森美	2447	SOP8	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市科雨电子有限公司	NCD5700DR2G	ON	25+	SOP-16	3854	就找我吧!--邀您体验愉快问购元件!	询价
深圳市凌旭科技有限公司	NCD5701BDR2G	ON/安森美	21+	SOP8	2222		询价
深圳市达恩科技有限公司	NCD57000DWR2G	ON	24+	NA	3000	进口原装假一罚十现货	询价
深圳市冠亿通科技有限公司	NCD5702DR2G	ON Sem	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价

更多NCD5供应商更新时间2025-11-21 16:34:00

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