NCD57090BDWR2G技术资料参数批发供应ONSEMI-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCD57090BDWR2G	文件：2.04169 Mbytes Page：25 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options 文件：2.04169 Mbytes 页数：25 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57090BDWR2G	文件：1.97998 Mbytes Page：25 Pages	Isolated High Current IGBT/MOSFET Gate Driver 文件：1.97998 Mbytes 页数：25 Pages	ONSEMI 安森美半导体	ONSEMI
NCV57090BDWR2G	文件：2.04169 Mbytes Page：25 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options 文件：2.04169 Mbytes 页数：25 Pages	ONSEMI 安森美半导体	ONSEMI
NCV57090BDWR2G	文件：1.97998 Mbytes Page：25 Pages	Isolated High Current IGBT/MOSFET Gate Driver 文件：1.97998 Mbytes 页数：25 Pages	ONSEMI 安森美半导体	ONSEMI

更多NCD57090BDWR2G供应商更新时间2025-10-11 14:18:00