NCD57090CDWR2G中文资料安森美半导体数据手册PDF规格书

NCx57090y, NCx57091y are high−current single channel

IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation,

designed for high system efficiency and reliability in high power

applications. The devices accept complementary inputs and depending

on the pin configuration, offer options such as Active Miller Clamp

(version A/D/F), negative power supply (version B) and separate high

and low (OUTH and OUTL) driver outputs (version C/E) for system

design convenience. The driver accommodate wide range of input

bias voltage and signal levels from 3.3 V to 20 V and they are

available in wide−body SOIC−8 package.

Features

• High Peak Output Current (+6.5 A/−6.5 A)

• Low Clamp Voltage Drop Eliminates the Need of Negative Power

Supply to Prevent Spurious Gate Turn−on (Version A/D/F)

• Short Propagation Delays with Accurate Matching

• IGBT/MOSFET Gate Clamping during Short Circuit

• IGBT/MOSFET Gate Active Pull Down

• Tight UVLO Thresholds for Bias Flexibility

• Wide Bias Voltage Range including Negative VEE2 (Version B)

• 3.3 V, 5 V, and 15 V Logic Input

• 5 kVrms Galvanic Isolation

• High Transient Immunity

• High Electromagnetic Immunity

• NCV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q100

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• Motor Control

• Uninterruptible Power Supplies (UPS)

• Automotive Applications

• Industrial Power Supplies

• Solar Inverters