丝印：N25；Package：SOT-23；NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTA) • Built-In Biasing Resistors, R1only • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free Green Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliabil

文件：67.41 Kbytes 页数：3 Pages

DIODES

美台半导体

丝印：N25；Package：SOT-23；NPN PRE-BIASED SMALL SIGNAL SOT-23

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTA) • Built-In Biasing Resistor, R1 only • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 2 and 3)

文件：123.56 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：N25；Package：SOT23；NPN PRE-BIASED TRANSISTOR IN SOT23

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTA) • Built-In Biasing Resistors, R1 only • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • The DDTC143TCAQ is suitable for automotive application

文件：305.61 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：N25；Package：SOT323；NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Built-In Biasing Resistor, R1 Only • Surface Mount Package Suited for Automated Assembly • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specif

文件：344.35 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：N25；Package：SOT323；NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Built-In Biasing Resistor, R1 Only • Surface Mount Package Suited for Automated Assembly • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specif

文件：344.35 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：N25；Package：SOT-23；NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR

文件：446.97 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：N25；Package：TSOT23-8L；High Precision Voltage Console

文件：579.1 Kbytes 页数：9 Pages

UPI

力智电子

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The N2500N is N-channel MOS Field Effect Transistor designed for DC-DC converter and 2.5 V drive switching applications. FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 5.8 Ω MAX. (VGS = 4.5 V, ID = 0.25 A) RDS(on)2 = 6.6 Ω MAX. (VGS = 2.5 V, ID = 0.25

文件：282.28 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The N2500N is N-channel MOS Field Effect Transistor designed for DC-DC converter and 2.5 V drive switching applications. FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 5.8 Ω MAX. (VGS = 4.5 V, ID = 0.25 A) RDS(on)2 = 6.6 Ω MAX. (VGS = 2.5 V, ID = 0.25

文件：282.28 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The N2500N is N-channel MOS Field Effect Transistor designed for DC-DC converter and 2.5 V drive switching applications. FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 5.8 Ω MAX. (VGS = 4.5 V, ID = 0.25 A) RDS(on)2 = 6.6 Ω MAX. (VGS = 2.5 V, ID = 0.25

文件：282.28 Kbytes 页数：8 Pages

RENESAS

瑞萨