MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The N2500N is N-channel MOS Field Effect Transistor designed for DC-DC converter and 2.5 V drive switching applications. FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 5.8 Ω MAX. (VGS = 4.5 V, ID = 0.25 A) RDS(on)2 = 6.6 Ω MAX. (VGS = 2.5 V, ID = 0.25

文件：282.28 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The N2500N is N-channel MOS Field Effect Transistor designed for DC-DC converter and 2.5 V drive switching applications. FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 5.8 Ω MAX. (VGS = 4.5 V, ID = 0.25 A) RDS(on)2 = 6.6 Ω MAX. (VGS = 2.5 V, ID = 0.25

文件：282.28 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The N2500N is N-channel MOS Field Effect Transistor designed for DC-DC converter and 2.5 V drive switching applications. FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 5.8 Ω MAX. (VGS = 4.5 V, ID = 0.25 A) RDS(on)2 = 6.6 Ω MAX. (VGS = 2.5 V, ID = 0.25

文件：282.28 Kbytes 页数：8 Pages

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瑞萨

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