DMN2009USS-13

Marking：N2009US；Package：SO-8；20V N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance (RDS(ON))andyetmaintainsuperiorswitchingperformance,makingit idealforhighefficiencypowermanagementapplications. Backlighting PowerManagementFunctions DC-DCConverters Features 

DMN2024UTS-13

Marking：N2024U；Package：TSSOP-8；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowGateThresholdVoltage LowOn-Resistance ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.partsqualifiedtoAEC-Q100/101/

DTC214Y

Marking：N24；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

DTC511T1G

Marking：N21；Package：SC-89；Bias Resistor Transistor

BiasResistorTransistor NPNSiliconSurfaceMountTransistor withMonolithicBiasResistorNetwork •Features 1)Built-inbiasresistorsenabletheconfigurationofan invertercircuitwithoutconnectingexternalinput resistors(seeequivalentcircuit). 2)Thebiasresistorsconsist

DTC511T3G

Marking：N21；Package：SC-89；Bias Resistor Transistor

BiasResistorTransistor NPNSiliconSurfaceMountTransistor withMonolithicBiasResistorNetwork •Features 1)Built-inbiasresistorsenabletheconfigurationofan invertercircuitwithoutconnectingexternalinput resistors(seeequivalentcircuit). 2)Thebiasresistorsconsist

ESD24V23T-LA

Marking：N24；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 168~350WattsPeakPulsePowerperLine(tp=8/20μs) ProtectstwounidirectionalI/Olines ProtectsonebidirectionalI/Oline Workingvoltage:3.3~24V Lowclampingvoltage Lowleakagecurrent IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-2(ESD)±25kV(air),±20kV(contact):3.3V~8V IE

ESD24V23TS-LA

Marking：N24；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 168~350WattsPeakPulsePowerperLine(tp=8/20μs) ProtectstwounidirectionalI/Olines ProtectsonebidirectionalI/Oline Lowclampingvoltage WorkingVoltages:3.3V~24V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs

G2014

Marking：N2014；Package：DFN2/2；N-Channel Enhancement Mode Power MOSFET

Description TheG2014usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. Application ⚫Powerswitch ⚫DC/DCconverters

G2014A

Marking：N2014；Package：DFN2/2；N-Channel Enhancement Mode Power MOSFET

Description TheG2014Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. AEC-Q101Qualified Application ⚫Powerswitch ⚫DC/DCconverters

NCS20232DR2G

Marking：N232；Package：SOIC-8；Operational Amplifier, 36 V, 3 MHz, 0.95 mV Input Offset Voltage, Rail-to-Rail

TheNCS2023xseriesofopampsfeatureawidesupplyrangeof 2.7Vto36Vwithaninputoffsetvoltageaslowas±0.95mVmax. Theseopampsareavailableinsingle,dual,andquadchannel configurations.Automotivequalifiedoptionsareavailableunderthe NCVprefixwithanoptionalextend