丝印：MX；Package：SOD-123RL；200W Peak Power Surface Mount TVS

文件：269.17 Kbytes 页数：4 Pages

SECOS

喜可士

ELP EXTRA LOW PROFILE STANDARD RECTIFIER

Features • Designed for applications with stringent profile restrictions • Passivated mesa structure for very low leakage currents • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, extremely low profile ceramic seal package with flexible copper leads for surface mount

文件：38.96 Kbytes 页数：2 Pages

Microsemi

美高森美

RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Harris FSC260R die • total dose: 100 kRAD(Si) within pre-radiation parameter limits • dose rate: 3 x 109RAD(Si)/sec @ 80BVDSS typical • dose rate: 2 x 1012RAD(Si)/sec @ ID £IDM typical • neutron: 1013 neutrons/cm2 within pre-radiation parameter limits • photocurrent: 17 nA/RAD(Si)

文件：183.1 Kbytes 页数：4 Pages

Microsemi

美高森美

RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Harris FSC260R die • total dose: 100 kRAD(Si) within pre-radiation parameter limits • dose rate: 3 x 109RAD(Si)/sec @ 80BVDSS typical • dose rate: 2 x 1012RAD(Si)/sec @ ID £IDM typical • neutron: 1013 neutrons/cm2 within pre-radiation parameter limits • photocurrent: 17 nA/RAD(Si)

文件：183.1 Kbytes 页数：4 Pages

Microsemi

美高森美

NPN microwave power transistors

DESCRIPTION NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is recommended for new designs. The MZ0912B100Y has a SOT443A metal ceramic flange package with the base connected to the fl

文件：98.88 Kbytes 页数：12 Pages

PHI

飞利浦

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration, and specified in class C. FEATURES • Interdigitated structure; high emitter efficiency • Diffused emitter ba

文件：92.33 Kbytes 页数：12 Pages

PHI

飞利浦

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration and specified in class C. FEATURES • Interdigitated structure; high emitter efficiency • Diffused emitter bal

文件：92.76 Kbytes 页数：12 Pages

PHI

飞利浦

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration and specified in class C. FEATURES • Interdigitated structure; high emitter efficiency • Diffused emitter bal

文件：82.51 Kbytes 页数：12 Pages

PHI

飞利浦

Microwave power transistor

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.

文件：88.67 Kbytes 页数：12 Pages

PHI

飞利浦

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange. FEATURES • Suitable for short and medium pulse applications up to 500 µs/10 • Internal input and output prematching networks allow an eas

文件：47.5 Kbytes 页数：8 Pages

PHI

飞利浦