MX043J中文资料美高森美数据手册PDF规格书
MX043J规格书详情
特性 Features
• Harris FSC260R die
• total dose: 100 kRAD(Si) within pre-radiation parameter limits
• dose rate: 3 x 109RAD(Si)/sec @ 80BVDSS typical
• dose rate: 2 x 1012RAD(Si)/sec @ ID £IDM typical
• neutron: 1013 neutrons/cm2 within pre-radiation parameter limits
• photocurrent: 17 nA/RAD(Si)/sec typical
• rated Safe Operating Area Curve for Single event Effects
• rugged polysilicon gate cell structure with ultrafast body diode
• low inductance surface mount power package available with “J-leads” (MX043J) or “gullwing-leads” (MX043G)
• very low thermal resistance
• reverse polarity available upon request add suffix “R”st
产品属性
- 型号:
MX043J
- 制造商:
MICROSEMI
- 制造商全称:
Microsemi Corporation
- 功能描述:
RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CTS |
2016+ |
DIP4 |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
CTS |
23+ |
MHZ |
20000 |
全新原装假一赔十 |
询价 | ||
PLEXUS |
18+ |
DIP4 |
34971 |
全新原装现货,可出样品,可开增值税发票 |
询价 | ||
MX045-50.0MHZ |
25+ |
14 |
14 |
询价 | |||
CTS |
23+ |
NA |
613 |
专做原装正品,假一罚百! |
询价 | ||
CTS |
新 |
11 |
全新原装 货期两周 |
询价 | |||
PLEXUS |
25+ |
DIP4 |
2789 |
原装优势!绝对公司现货! |
询价 | ||
PLEXUS |
23+ |
DIP4 |
5000 |
原装正品,假一罚十 |
询价 | ||
CTS |
24+ |
54 |
询价 | ||||
PLEXUS |
24+ |
DIP4 |
9600 |
原装现货,优势供应,支持实单! |
询价 |


