MX1011B430W中文资料飞利浦数据手册PDF规格书

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange.

FEATURES

• Suitable for short and medium

pulse applications up to

500 µs/10

• Internal input and output

prematching networks allow an

easier design of circuits

• Diffused emitter ballasting resistors

improve ruggedness

• Interdigitated emitter-base

structure provides high emitter

efficiency

• Gold metallization with barrier

realizes very stable characteristics

and excellent lifetime

• Multicell geometry improves power

sharing and reduces thermal

resistance.

APPLICATIONS

Intended for use in common base,

class C, broadband, pulsed power

amplifiers for TCAS applications in

the 1030 to 1090 MHz band. Also

suitable for medium pulse, heavy duty

operation within this band.