isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 850V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：301.5 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode

文件：243.45 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 850V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：332.73 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 850V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and PFC Circuits..

文件：295.6 Kbytes 页数：2 Pages

ISC

无锡固电