isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-Channel Power MOSFETs, 5.5A, 350 V/400V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

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FAIRCHILD

仙童半导体

N?묬hannel Enhancement

文件：261.1 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM

文件：258.7 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N-Channel Enhancement-Mode Silicon Gate

文件：109.44 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel 500V (D-S)Power MOSFET

文件：1.04277 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N−Channel Enhancement

ONSEMI

安森美半导体