Three-Phase Bridge Rectifier

文件：661.24 Kbytes 页数：3 Pages

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尼尔半导体

Glass Passivated Three-Phase Bridge Rectifier, 75A

文件：1.61234 Mbytes 页数：3 Pages

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尼尔半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.08 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS POWER FET LOGIC LEVEL 75 AMPERES RDS(on) = 9.0 mOHM 25 VOLTS

HDTMOS E-FET High Density Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

文件：235.54 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.2 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTS

HDTMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy–efficient design also offers a drain–to–source diode with a fast rec

文件：214 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.96 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

文件：979.34 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS

HDTMOS E-FET High Density Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

文件：275.88 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

Three-Phase Bridge Rectifier

文件：661.24 Kbytes 页数：3 Pages

NELLSEMI

尼尔半导体